Four-probe sensing of temperature during Joule heating of silicon
نویسندگان
چکیده
We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: method using thermal dependence resistivity and based on measured sheet power density. The methods are compared to optical measurements made by fitting gray-body model onto data commercial spectrometer. conducted 890 K 1540 K, they converge at temperatures above 1400 indicating high degree self-consistency.
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ژورنال
عنوان ژورنال: Review of Scientific Instruments
سال: 2021
ISSN: ['1089-7623', '1527-2400', '0034-6748']
DOI: https://doi.org/10.1063/5.0033465